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STPSC806D

STMicroelectronics
Part Number STPSC806D
Manufacturer STMicroelectronics
Description 600 V power Schottky silicon carbide diode
Published Mar 1, 2010
Detailed Description www.DataSheet4U.com STPSC806D 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recov...
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STPSC806D
STPSC806D

Overview
www.
DataSheet4U.
com STPSC806D 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible.
The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switchin...


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