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2STBN15D100

ST Microelectronics
Part Number 2STBN15D100
Manufacturer ST Microelectronics
Description NPN Transistor
Published Mar 1, 2010
Detailed Description 2STBN15D100 Low voltage NPN power Darlington transistor Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic ...
Datasheet PDF File 2STBN15D100 PDF File

2STBN15D100
2STBN15D100

Overview
2STBN15D100 Low voltage NPN power Darlington transistor Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
TAB 3 1 D²PAK Figure 1.
Internal schematic diagrams R1 = 8 kΩ R2 = 150 Ω Table 1.
Device summary Order code 2STBN15D100T4 Marking BN15D100 Package D²PAK January 2010 Doc ID 16117 Rev 2 Packaging Tape and reel 1/7 www.
st.
com 7 Electrical ratings 1 Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tcase = 25 °C Storage temperature Max.
operating junction temperature Ta...


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