DatasheetsPDF.com

STL34NF06

Part Number	STL34NF06
Manufacturer	STMicroelectronics
Description	N-CHANNEL MOSFET
Published	Mar 1, 2010
Detailed Description	www.DataSheet4U.com STL34NF06 N-CHANNEL 60V - 0.024Ω - 34A PowerFLAT™ LOW GATE CHARGE STripFET™II MOSFET PRELIMINARY DA...
Datasheet	STL34NF06 PDF File

Overview

www.
DataSheet4U.
com STL34NF06 N-CHANNEL 60V - 0.
024Ω - 34A PowerFLAT™ LOW GATE CHARGE STripFET™II MOSFET PRELIMINARY DATA TYPE STL34NF06 VDSS 60 V RDS(on) < 0.
028Ω ID 34 A TYPICAL RDS(on) = 0.
024Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology.
The resulting transistor shows extremely low onresistance and minimal gate charge.
The new PowerFLAT™ package allow a significant reduction in board space without compramising performance.
PowerFLAT™(5x5) (Chip Scale Package) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C (*) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature Value 60 60 ± 20 34 20 136 70 0.
56 250 –55 to 150 (1) Starting Tj = 25°C, ID = 17A, VDD = 42V Unit V V V A A A W W/°C mJ °C (•)Pulse width limited by safe operating area (*) Current Limited by Wire Bonding is 20A November 2002 1/6 www.
DataSheet4U.
com STL34NF06 THERMAL DATA Rthj-case Rthj-pcb (#) Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.
8 31.
2 °C/W °C/W (*) When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V Min.
60 1 10 ±100 Typ.
Max.
Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Dra...

Similar Datasheet

STL34NF06 N-CHANNEL MOSFET - STMicroelectronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)