DatasheetsPDF.com

STL35NF3LL

STMicroelectronics
Part Number STL35NF3LL
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Mar 1, 2010
Detailed Description www.DataSheet4U.com N-CHANNEL 30V - 0.0055Ω - 35A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET TYPE STL35NF3LL s s s ST...
Datasheet PDF File STL35NF3LL PDF File

STL35NF3LL
STL35NF3LL

Overview
www.
DataSheet4U.
com N-CHANNEL 30V - 0.
0055Ω - 35A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET TYPE STL35NF3LL s s s STL35NF3LL TARGET DATA VDSS 30 V RDS(on) < 0.
007 Ω ID 35 A TYPICAL RDS(on) = 0.
0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology.
The resulting transistor shows extremely low onresistance and minimal gate charge.
The new PowerFLAT™ package allows a significant reduction in board space without compromising performance.
PowerFLAT™(6x5) (Chip Scale Package) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(#) IDM (q) PTOT dv/dt(1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature Value 30 30 ± 15 35 22 140 80 0.
64 TBD TBD –55 to 150 (1)ISD<35A, di/dt<300A/µs, VDD5V Unit V V V A A A W W/°C V/ns J °C (q) Pulse width limited by safe operating area (#) Limited by Wire Bonding October 2001 1/6 www.
DataSheet4U.
com STL35NF3LL THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.
56 50 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 15V Min.
30 1 10 ±100 Typ.
Max.
Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Paramet...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)