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IS64WV51216BLL

Integrated Silicon Solution
Part Number IS64WV51216BLL
Manufacturer Integrated Silicon Solution
Description 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Published Mar 4, 2010
Detailed Description IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY OCTOBE...
Datasheet PDF File IS64WV51216BLL PDF File

IS64WV51216BLL
IS64WV51216BLL

Overview
IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.
3V SUPPLY OCTOBER 2009 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE op- tions • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply VDD 1.
65V to 2.
2V (IS61WV51216ALL) speed = 20ns for VDD 1.
65V to 2.
2V VDD 2.
4V to 3.
6V (IS61/64WV51216BLL) speed = 10ns for VDD 2.
4V to 3.
6V speed = 8ns for VDD 3.
3V + 5% • Packages available: – 48-ball miniBGA (9mm x 11mm) – 44-pin TSOP (Type II) • Industrial and Automotive Temperature Support • Lead-free available • Data control for upper and lower bytes FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61WV51216ALL/BLL and IS64WV51216BLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.
It is fabricated usi...


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