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MD7P19130HR3

Part Number	MD7P19130HR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Mar 5, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 0, 5/2008 www.DataSheet4U.com RF Power Field E...
Datasheet	MD7P19130HR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev.
0, 5/2008 www.
DataSheet4U.
com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1250 mA, Pout = 40 Watts Avg.
, Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 20 dB Drain Effici...

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