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SSF2301B

Silikron Semiconductor Co
Part Number SSF2301B
Manufacturer Silikron Semiconductor Co
Description PWM applications
Published Mar 6, 2010
Detailed Description SSF2301B www.DataSheet4U.com DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low...
Datasheet PDF File SSF2301B PDF File

SSF2301B
SSF2301B

Overview
SSF2301B www.
DataSheet4U.
com DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
D G S GENERAL FEATURES ● VDS = -20V,ID = -2.
8A RDS(ON) < 150mΩ @ VGS=-2.
5V RDS(ON) < 100mΩ @ VGS=-4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 2301B Device SSF2301B Device Package SOT23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit -20 ±8 -2.
8 -10 1.
25 -55 To 150 Unit V V A A W ℃ VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 100 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=-250μA VDS=-20V,VGS=0V VGS=±8V,VDS=0V Min -20 Typ Max Unit V -1 ±100 μA nA ©Silikron Semiconductor CO.
,LTD.
1 http://www.
silikron.
com v1.
1 SSF2301B www.
DataSheet4U.
com ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) Diode Forwar...


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