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SSF2306B

Silikron Semiconductor Co
Part Number SSF2306B
Manufacturer Silikron Semiconductor Co
Description Battery protection
Published Mar 6, 2010
Detailed Description SSF2306B www.DataSheet4U.com DESCRIPTION The SSF2306B uses advanced trench technology to provide excellent RDS(ON), low...
Datasheet PDF File SSF2306B PDF File

SSF2306B
SSF2306B

Overview
SSF2306B www.
DataSheet4U.
com DESCRIPTION The SSF2306B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
G D S GENERAL FEATURES ● VDS = 29V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.
5V RDS(ON) < 40mΩ @ VGS=4.
5V RDS(ON) < 35mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 2306B Device SSF2306B Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 29 ±12 5 20 1.
38 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 90 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=250μA VDS=30V,VGS=0V VGS=±12V,VDS=0V Min 29 Typ Max Unit V 1 ±100 μA nA ©Silikron Semiconductor CO.
,LTD.
1 http://www.
silikron.
com v1.
0 SSF2306B www.
DataSheet4U.
com ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA VGS=2.
5V, ID=2.
6A Drain-Source On-State Resistance RDS(ON) VGS=4.
5V, ID=5A VGS=10V, ID=5A Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage ...


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