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SSF2334

Silikron Semiconductor Co
Part Number SSF2334
Manufacturer Silikron Semiconductor Co
Description Battery protection
Published Mar 6, 2010
Detailed Description www.DataSheet4U.com SSF2334 DESCRIPTION The SSF2334 uses advanced trench technology to provide excellent RDS(ON), low ...
Datasheet PDF File SSF2334 PDF File

SSF2334
SSF2334

Overview
www.
DataSheet4U.
com SSF2334 DESCRIPTION The SSF2334 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
D G S Schematic diagram GENERAL FEATURES ● VDS = 20V,ID = 4.
5A RDS(ON) < 80mΩ @ VGS=2.
5V RDS(ON) < 45mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 2334 Device SSF2334 Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit 20 ±10 4.
5 16 1.
2 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 140 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min 20 Typ Max Unit V ©Silikron Semiconductor CO.
,LTD.
1 http://www.
silikron.
com v1.
0 www.
DataSheet4U.
com SSF2334 1 ±100 μA nA Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IDSS IGSS VDS=20V,VGS=0V VGS=±10V,VDS=0V VGS(t...


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