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SSF2429

Silikron Semiconductor Co
Part Number SSF2429
Manufacturer Silikron Semiconductor Co
Description Battery protection
Published Mar 6, 2010
Detailed Description SSF2429 www.DataSheet4U.com DESCRIPTION The SSF2429 uses advanced trench technology to provide excellent RDS(ON), low g...
Datasheet PDF File SSF2429 PDF File

SSF2429
SSF2429

Overview
SSF2429 www.
DataSheet4U.
com DESCRIPTION The SSF2429 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
D G GENERAL FEATURES ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.
5V RDS(ON) < 48mΩ @ VGS=-2.
5V S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT23-6 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 2429 Device SSF2429 Device Package SOT23-6 Reel Size Ø180mm Tape width 8mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit -20 ±12 -5 -20 1.
4 -55 To 150 Unit V V A A W ℃ VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 90 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Min -20 Typ Max Unit V ©Silikron Semiconductor CO.
,LTD.
1 http://www.
silikron.
com v1.
0 SSF2429 www.
DataSheet4U.
com Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IDSS IGSS VDS=-20V,VGS=0V VGS=±12V,VDS=0V -1 ±100 μA nA VGS(th) RDS(ON) gFS VDS=VGS,ID=-250μA VGS=-4.
5V, ID=-5A VGS=-2.
5V, ID=-3A VDS=-10V,ID=-3A...


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