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SSF3018D

Silikron Semiconductor Co
Part Number SSF3018D
Manufacturer Silikron Semiconductor Co
Description N-Channel MOSFET
Published Mar 6, 2010
Detailed Description www.DataSheet4U.com SSF3018D Feathers: „ „ „ „ „ Advanced trench process technology Special designed for Convertors and...
Datasheet PDF File SSF3018D PDF File

SSF3018D
SSF3018D

Overview
www.
DataSheet4U.
com SSF3018D Feathers: „ „ „ „ „ Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test ID=80A BV=100V Rdson=14mohm Description: The SSF3018D is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET.
This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 11.
6mohm.
Application: „ Power switching application Absolute Maximum Ratings Parameter ID@Tc=25ْ C ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR TJ TSTG Thermal Resistance Parameter RθJC Junction-to-case Min.
— Typ.
0.
65 Max.
— Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range 80 70 320 192 2.
0 ±20 460 TBD –55 to +150 ْC W W/ْ C V mJ A SSF3018D TOP View (TO220) Max.
Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage Total gate charge Gate-to-Source charge 2009.
7.
15 Min.
100 — 2.
0 33 — — — — — — Typ.
— 11.
6 55 — — — — 60 21 Max.
Units — 14 4.
0 — 1 5 200 -200 — — Version: 1.
0 Test Conditions VGS=0V,ID=250μA VGS=10V,ID=30A VDS=VGS,ID=250μA VDS=10V,ID=40A VDS=100V,VGS=0V VDS=100V, VGS=0V,TJ=150ْC VGS=20V VGS=-20V ID=25A VDS=0.
5VDSS page 1of5 V mΩ V S μA IGSS Qg Qgs nA nC ©Silikron Semiconductor CO.
LTD.
www.
DataSheet4U.
com SSF3018D Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time ...


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