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BTD882J3

Cystech Electonics Corp
Part Number BTD882J3
Manufacturer Cystech Electonics Corp
Description NPN Transistor
Published Mar 9, 2010
Detailed Description CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882J3 BVCEO IC Spec. No. : C848J3-H Issued Da...
Datasheet PDF File BTD882J3 PDF File

BTD882J3
BTD882J3

Overview
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor BTD882J3 BVCEO IC Spec.
No.
: C848J3-H Issued Date : 2003.
04.
02 Revised Date :2017.
11.
10 Page No.
: 1/7 50V 3A Features • Low VCE(sat), typically 0.
25V at IC / IB = 2A / 0.
2A • Excellent current gain characteristics • Complementary to BTB772J3 • Pb-free lead plating and halogen-free package Symbol BTD882J3 Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTD882J3-X-T3-G Package TO-252 (Pb-free lead plating package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3: 2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name BTD882J3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C848J3-H Issued Date : 2003.
04.
02 Revised Date :2017.
11.
10 Page No.
: 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1.
Single Pulse Pw≦350us,Duty≦2%.
Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit 50 50 5 3 7 1 10 150 -55~+150 *1 Unit V V V A A W °C °C Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient, max Thermal Resistance, Junction-to-Case, max Symbol RθJA RθJC Limit 125 12.
5 Unit °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min.
50 50 5 150 180 - Typ.
0.
25 90 13 Max.
1 1 0.
5 2 560 - Unit V V V μA μA V V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.
2A IC=2A, IB=0.
2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.
1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE2 Rank Range P 180~390 E 270~560 BTD882J3 CYStek Product Specification CYSte...


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