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CMBD1205

Continental Device India Limited
Part Number CMBD1205
Manufacturer Continental Device India Limited
Description SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
Published Mar 9, 2010
Detailed Description Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package www.DataSheet4...
Datasheet PDF File CMBD1205 PDF File

CMBD1205
CMBD1205


Overview
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package www.
DataSheet4U.
com CMBD1201, CMBD1202, CMBD1203 CMBD1204, CMBD1205, CMBD4148 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, CMBD4148 are all single diodes CMBD1203 is a dual diode, in series CMBD1204 is a dual diode, common cathode CMBD1205 is a dual diode, common anode Marking CMBD1201 – 24 CMBD1202 – 25 CMBD1203 – 26 CMBD1204 – 27 CMBD1205 – 28 CMBD4148 – 5H 2 CMBD1201 3 CMBD4148 1 1 CMBD1202 3 2 2 CMBD1203 3 1 2 CMBD1204 3 1 2 CMBD1205 3 1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS (per diode) Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Forward current Junction temperature Forward voltage at IF = 10 mA VR VRRM IFRM IF Tj VF max.
max.
max.
max.
max.
< 75 V 100 V 500 mA 215 mA 150 ° C 0.
855 V Continental Device India Limited Data Sheet Page 1 of 3 www.
DataSheet4U.
com CMBD1201, CMBD1202, CMBD1203 CMBD1204, CMBD1205, CMBD4148 Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA trr < 4 ns RATINGS (per diode) (at TA = 25°C unless otherwise specified) Limiting values Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current (per crystal) VR VRRM IFRM IF t = 1 µs t = 1 ms t=1s Storage temperature IFSM IFSM IFSM Tstg Junction temperature Tj max.
max.
max.
max.
75 V 100 V 500 mA 215 mA max.
4A max.
1.
0 A max.
0.
5 A –55 to +150 ° C max.
150 ° C THERMAL RESISTANCE From junction to ambient CHARACTERISTICS (per diode) Tj = 25 °C unless otherwise specified Forward voltage IF = 10 mA IF = 200 mA IF = 10 mA CMBD4148 Reverse currents VR = 20 V VR = 75 V VR = 25 V; Tj = 150 °C Forward recovery voltage IF = 10 mA; tp = 20 ns Recovery charge IF = 10 mA to VR = 5V; R = 100 Ω Diode capacitance VR = 0; f = 1 MHz Reve...



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