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HBA114TN6R

Cystech Electonics
Part Number HBA114TN6R
Manufacturer Cystech Electonics
Description Dual NPN Digital Transistors
Published Mar 9, 2010
Detailed Description CYStech Electronics Corp. Dual NPN Digital Transistors www.DataSheet4U.com Spec. No. : C353S6R Issued Date : 2003.05.23...
Datasheet PDF File HBA114TN6R PDF File

HBA114TN6R
HBA114TN6R

Overview
CYStech Electronics Corp.
Dual NPN Digital Transistors www.
DataSheet4U.
com Spec.
No.
: C353S6R Issued Date : 2003.
05.
23 Revised Date : Page No.
: 1/4 HBC114TS6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
•The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
•Only the on/off conditions need to be set for operation, making device design easy.
•Two DTC114T chips in a SOT-363 package.
•Mounting by SOT-323 automatic mounting machines is possible.
•Mounting cost and area can be cut in half.
•Transistor elements are independent, eliminating interference •Complements the HBA114TN6R Equivalent Circuit HBC114TS6R SOT-363R RB2 TR1 RB1 TR2 RB1=10kΩ , RB2=10 kΩ HBC114TS6R CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor,Ta=25℃) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note: 150mW per element must not be exceeded.
www.
DataSheet4U.
com Spec.
No.
: C353S6R Issued Date : 2003.
05.
23 Revised Date : Page No.
: 2/4 Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 50 50 5 100 200 (Note) 150 -55~+150 Unit V V V mA mW °C °C Characteristics (Each Transistor, Ta=25℃) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency Symbol VCBO VCEO VEBO ICBO IEBO VCE(sat) hFE R fT Min.
Typ.
Max.
Unit Test Conditions 50 V IC=50µA 50 5 100 7 10 250 0.
5 0.
5 0.
3 600 13 V V µA µA V IC=1mA IE=50µA VCB=50V VEB=4V IC=10mA, IB=1mA VCE=5V, IC=1mA kΩ MHz VCE=10V, IC=5mA, f =100MHz * * Transition fre...


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