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HBA114YS6R

Cystech Electonics
Part Number HBA114YS6R
Manufacturer Cystech Electonics
Description Dual NPN Digital Transistors
Published Mar 9, 2010
Detailed Description CYStech Electronics Corp. Dual NPN Digital Transistors www.DataSheet4U.com Spec. No. : C355S6R Issued Date : 2003.05.23...
Datasheet PDF File HBA114YS6R PDF File

HBA114YS6R
HBA114YS6R

Overview
CYStech Electronics Corp.
Dual NPN Digital Transistors www.
DataSheet4U.
com Spec.
No.
: C355S6R Issued Date : 2003.
05.
23 Revised Date : Page No.
: 1/4 HBC114YS6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
•The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
•Only the on/off conditions need to be set for operation, making device design easy.
•Two DTC114Y chips in a SOT-363 package.
•Mounting by SOT-323 automatic mounting machines is possible.
•Mounting cost and area can be cut in half.
•Transistor elements are independent, eliminating interference •Complements the HBA114YS6R Equivalent Circuit HBC114YS6R SOT-363R RBE2 RB2 TR1 RB1 RBE1 TR2 RB1=10kΩ , RB2=10 kΩ RBE1=47kΩ , RBE2=47 kΩ HBC114YS6R CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25℃) Parameter Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature Note: 150mW per element must not be exceeded.
www.
DataSheet4U.
com Spec.
No.
: C355S6R Issued Date : 2003.
05.
23 Revised Date : Page No.
: 2/4 Symbol VCC VIN IO IO(max.
) Pd Tj Tstg Limits 50 -6~+40 70 100 200 (Note) 150 -55~+150 Unit V V mA mA mW °C °C Electrical Characteristics (Each Transistor, Ta=25℃) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min.
3 68 7 3.
7 Typ.
0.
1 10 4.
7 250 Max.
0.
3 0.
3 0.
88 0.
5 13 5.
7 Unit V V V mA µA kΩ MHz Test Conditions VCC=5V, IO=100µA VO=0.
3V, IO=1mA IO/II=5mA/0.
25mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10V, IC=5mA, f =100MHz * * Transition frequency of the device Characteristic Curves DC Current Gain vs Output Current 1000 ...


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