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MEN9971J3

Cystech Electonics
Part Number MEN9971J3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Mar 9, 2010
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C432J3 Issued Date : ...
Datasheet PDF File MEN9971J3 PDF File

MEN9971J3
MEN9971J3

Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET www.
DataSheet4U.
com Spec.
No.
: C432J3 Issued Date : 2008.
12.
09 Revised Date : 2009.
02.
04 Page No.
: 1/8 MEN9971J3 Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package BVDSS ID RDSON(MAX) 60V 25A 20mΩ Symbol MEN9971J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.
1mH, ID=20A,RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH *2 Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Note : *1.
Pulse width limited by maximum junction temperature *2.
Duty cycle ≤ 1% MEN9971J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 60 ±20 25 16 100 *1 20 20 10 50 0.
31 -55~+175 V A mJ W W/°C °C CYStek Product Specification CYStech Electronics Corp.
Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a www.
DataSheet4U.
com Spec.
No.
: C432J3 Issued Date : 2008.
12.
09 Revised Date : 2009.
02.
04 Page No.
: 2/8 Value 3 75 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Min.
Typ.
1.
8 25 16 19 43 7.
2 11 20 12 50 25 3330 256 207 2 60 42 Max.
2.
5 ±100 1 25 20 24 25 100 1.
3 Unit V V S nA μA μA A mΩ mΩ Test Conditions VGS=0, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=20A VGS=±20, VDS=0 VDS =48V, VGS =0 VDS =40V, VGS =0, Tj=125°C VDS =5V, VGS =10V VGS =10V, ID=20A VGS =7V, ID=15A Static BVDSS 60 VGS(th) 1 GFS IGSS IDSS IDSS ID(ON) 25 *RDS(ON) *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - nC ID=20A, VDS=30V, VGS=10V VDS=30V, ID=1A, VGS=10V, RG=6Ω ns ...


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