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MTB12N03Q8

Cystech Electonics
Part Number MTB12N03Q8
Manufacturer Cystech Electonics
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Published Mar 9, 2010
Detailed Description CYStech Electronics Corp. N-Channel Logic Level Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C730Q8 Is...
Datasheet PDF File MTB12N03Q8 PDF File

MTB12N03Q8
MTB12N03Q8

Overview
CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET www.
DataSheet4U.
com Spec.
No.
: C730Q8 Issued Date : 2009.
07.
02 Revised Date : Page No.
: 1/8 MTB12N03Q8 Description BVDSS ID RDSON(max) 30V 12A 11.
5mΩ The MTB12N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free Lead Plating and Halogen-free package Symbol MTB12N03Q8 Outline SOP-8 Pin 1 G：Gate D：Drain S：Source MTB12N03Q8 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C) Parameter Symbol www.
DataSheet4U.
com Spec.
No.
: C730Q8 Issued Date : 2009.
07.
02 Revised Date : Page No.
: 2/8 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.
1mH, ID=12A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH TA=25℃ Total Power Dissipation TA=100℃ Operating Junction and Storage Temperature Range VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg 30 ±20 12 10 48 *1 12 7.
2 3.
6 *2 3 *3 1.
5 -55~+175 V A mJ W °C 100% UIS testing in condition of VD=15V, L=0.
1mH, VG=10V, IL=15A, Rated VDS=25V N-CH Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 25 50 *3 Unit °C/W °C/W Note : 1.
Pulse width limited by maximum junction temperature 2.
Duty cycle≤1% 3.
Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Characteristics (TC=25°C, unless otherwise specified) Symbol Static...


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