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HYMD512M646BFS8-L Datasheet PDF

Hynix Semiconductor
Part Number HYMD512M646BFS8-L
Manufacturer Hynix Semiconductor
Title Unbuffered DDR SO-DIMM
Description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses ...
Features





• 1GB (128M x 64) Unbuffered DDR SO-DIMM based on 128Mx8 DDR MCP SDRAM 200-pin small outline dual in-line memory module (SO-DIMM) 2.5V +/- 0.2V VDD and VDDQ Power supply All inputs and outputs are compatible with SSTL_2 interface Fully differential clock operations (CK & /CK) with 100MHz/1...

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Datasheet PDF File HYMD512M646BFS8-L PDF File


HYMD512M646BFS8-L HYMD512M646BFS8-L HYMD512M646BFS8-L




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HYMD512M646BFS8-H : and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Jan. 2004 1 128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B(L)FS8-J/M/K/H/L DESCRIPTION www.DataSheet4U.com Hynix HYMD512M646B(L)FS8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 128Mx64 high-speed memory arrays. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series consists of eight 128Mx8 DDR SDRAM in FBGA packages on a 200pin glass-epoxy substrate. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series provide a high performance 8-byte inter.

HYMD512M646BFS8-J : and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Jan. 2004 1 128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B(L)FS8-J/M/K/H/L DESCRIPTION www.DataSheet4U.com Hynix HYMD512M646B(L)FS8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 128Mx64 high-speed memory arrays. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series consists of eight 128Mx8 DDR SDRAM in FBGA packages on a 200pin glass-epoxy substrate. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series provide a high performance 8-byte inter.

HYMD512M646BFS8-K : and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Jan. 2004 1 128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B(L)FS8-J/M/K/H/L DESCRIPTION www.DataSheet4U.com Hynix HYMD512M646B(L)FS8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 128Mx64 high-speed memory arrays. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series consists of eight 128Mx8 DDR SDRAM in FBGA packages on a 200pin glass-epoxy substrate. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series provide a high performance 8-byte inter.

HYMD512M646BFS8-M : and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Jan. 2004 1 128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B(L)FS8-J/M/K/H/L DESCRIPTION www.DataSheet4U.com Hynix HYMD512M646B(L)FS8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 128Mx64 high-speed memory arrays. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series consists of eight 128Mx8 DDR SDRAM in FBGA packages on a 200pin glass-epoxy substrate. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series provide a high performance 8-byte inter.




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