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CGD1040HI

Part Number	CGD1040HI
Manufacturer	NXP Semiconductors
Description	1 GHz 20 dB gain GaAs high output power doubler
Published	Mar 18, 2010
Detailed Description	CGD1040HI Rev. 01 — 22 September 2009 www.DataSheet4U.com 1 GHz, 20 dB gain GaAs high output power doubler Product dat...
Datasheet	CGD1040HI PDF File

Overview

CGD1040HI Rev.
01 — 22 September 2009 www.
DataSheet4U.
com 1 GHz, 20 dB gain GaAs high output power doubler Product data sheet 1.
Product proﬁle 1.
1 General description Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.
2 Features I I I I I I I I I Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain compensation over temperature Rugged construction Unconditionally stable Thermally optimized design Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I Inte...

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CGD1040HI 1 GHz 20 dB gain GaAs high output power doubler - NXP Semiconductors

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