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SDI200S12

Sirectifier Semiconductors
Part Number SDI200S12
Manufacturer Sirectifier Semiconductors
Description SPT IGBT Modules
Published Mar 20, 2010
Detailed Description SDI200S12 SPT IGBT Modules www.DataSheet4U.com Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol IGBT ...
Datasheet PDF File SDI200S12 PDF File

SDI200S12
SDI200S12

Overview
SDI200S12 SPT IGBT Modules www.
DataSheet4U.
com Dimensions in mm (1mm = 0.
0394") Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min o 310(220) 620(440) _ +20 _ 40.
.
.
+150(125) 4000 190(130) 620(440) 1450 V C V Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(80)oC, tP =1ms IFRM IFSM tP =10ms; sin.
;Tj=150 oC A A A SDI200S12 SPT IGBT Modules Characteristics Symbol IGBT VGE(th) ICES VCE(TO) rCE VCE(sat) Cies Coes Cres LCE RCC'+EE' Conditions VGE = VCE, IC = 6mA VGE = 0; VCE = VCES; Tj = 25(125)oC Tj = 25(125)oC VGE = 15V, Tj = 25(125)oC IC =150A; VGE = 15V; chip level under following conditions VGE = 0, VCE = 25V, f = 1MHz www.
DataSheet4U.
com TC = 25oC, unless otherwise specified min.
4.
8 typ.
max.
Units V mA V m V nF 20 nH m ns ns ns ns mJ 2.
5 1.
2 8.
7 V V m A uC mJ K/W K/W K/W Nm Nm g 5.
5 6.
45 0.
2 0.
6 1(0.
9) 1.
15(1.
05) 6(8) 8(10) 1.
9(2.
1) 2.
35(2.
55) 13 2 2 0.
35(0.
5) 125 50 620 55 18(15) 2(1.
8) 1.
1 6 190 24 8 0.
095 0.
25 0.
038 td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 150A; Tj = 125oC Qrr di/dt = 4800A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M6 w res.
, terminal-chip TC = 25(125) C under following conditions: VCC = 600V, IC = 150A RGon = RGoff = 7 , Tj = 125oC VGE = ± 15V o 3 2.
5 5 5 325 ...


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