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APT26GU30K

Advanced Power Technology
Part Number APT26GU30K
Manufacturer Advanced Power Technology
Description POWER MOS7 IGBT
Published Mar 21, 2010
Detailed Description TYPICAL PERFORMANCE CURVES APT26GU30K_SA APT26GU30K APT26GU30SA www.DataSheet4U.com 300V POWER MOS 7 IGBT ® TO-220 ...
Datasheet PDF File APT26GU30K PDF File

APT26GU30K
APT26GU30K

Overview
TYPICAL PERFORMANCE CURVES APT26GU30K_SA APT26GU30K APT26GU30SA www.
DataSheet4U.
com 300V POWER MOS 7 IGBT ® TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
D2PAK G C C E G E • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient • SSOA rated G C All Ratings: TC = 25°C unless otherwise specified.
APT26GU30K_SA UNIT E 300 ±20 ±30 47 26 85 85A @ 300V 187 -55 to 150 300 Watts °C Amps Volts Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max.
Lead Temp.
for Soldering: 0.
063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 300 3 4.
5 1.
5 1.
5 250 µA nA 4-2004 050-7466 Rev B 6 2.
0 Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2 2 Volts I CES I GES Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2...


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