DatasheetsPDF.com

IXTT6N120

Part Number	IXTT6N120
Manufacturer	IXYS Corporation
Description	High Voltage Power MOSFET
Published	Mar 21, 2010
Detailed Description	www.DataSheet4U.com High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6...
Datasheet	IXTT6N120 PDF File

Overview

www.
DataSheet4U.
com High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6N120 IXTT 6N120 VDSS ID25 RDS(on) = 1200 V = 6A = 2.
6 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 6 24 6 25 500 5 300 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ mJ V/ns W °C °C °C °C g g TO-247 AD (IXTH) (TAB) TO-268 (IXTT) Case Style G G = Gate S = Source S D = Drain TAB = Drain (TAB) Features z z z z 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque TO-247 AD TO-268 300 6 4 1.
13/10 Nm/lb.
in.
z International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low...

Similar Datasheet

IXTT6N120 High Voltage Power MOSFET - IXYS Corporation

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)