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EBE11ED8AGWA

Elpida Memory
Part Number EBE11ED8AGWA
Manufacturer Elpida Memory
Description 1GB Unbuffered DDR2 SDRAM DIMM
Published Mar 21, 2010
Detailed Description PRELIMINARY DATA SHEET www.DataSheet4U.com 1GB Unbuffered DDR2 SDRAM DIMM EBE11ED8AGWA (128M words × 72 bits, 2 Ranks)...
Datasheet PDF File EBE11ED8AGWA PDF File

EBE11ED8AGWA
EBE11ED8AGWA


Overview
PRELIMINARY DATA SHEET www.
DataSheet4U.
com 1GB Unbuffered DDR2 SDRAM DIMM EBE11ED8AGWA (128M words × 72 bits, 2 Ranks) Specifications • Density: 1GB • Organization  128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.
0mm  Lead pitch: 1.
0mm  Lead-free (RoHS compliant) • Power supply: VDD = 1.
8V ± 0.
1V • Data rate: 667Mbps/533Mbps (max.
) • Four internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms  Average refresh period 7.
8µs at 0°C ≤ TC ≤ +85°C 3.
9µs at +85°C < TC ≤ +95°C • Operating case temperature range  TC = 0°C to +95°C Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs • Differential clock inputs (CK and /CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Data mask (DM) for write data • Posted /CAS by programmable additive latency for better command and data bus efficiency • Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality • /DQS can be disabled for single-ended Data Strobe operation Document No.
E0920E10 (Ver.
1.
0) Date Published June 2006 (K) Japan Printed in Japan URL: http://www.
elpida.
com Elpida Memory, Inc.
2006 EBE11ED8AGWA Ordering Information Data rate Mbps (max.
) Component JEDEC speed bin (CL-tRCD-tRP) DDR2-667 (5-5-5) DDR2-533 (4-4-4) Contact pad Gold www.
DataShee...



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