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EBE11UE6ACUA

Elpida Memory
Part Number EBE11UE6ACUA
Manufacturer Elpida Memory
Description 1GB DDR2 SDRAM SO-DIMM
Published Mar 21, 2010
Detailed Description DATA SHEET www.DataSheet4U.com 1GB DDR2 SDRAM SO-DIMM EBE11UE6ACUA (128M words × 64 bits, 2 Ranks) Specifications • De...
Datasheet PDF File EBE11UE6ACUA PDF File

EBE11UE6ACUA
EBE11UE6ACUA


Overview
DATA SHEET www.
DataSheet4U.
com 1GB DDR2 SDRAM SO-DIMM EBE11UE6ACUA (128M words × 64 bits, 2 Ranks) Specifications • Density: 1GB • Organization  128M words × 64 bits, 2 ranks • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in line memory module (SO-DIMM)  PCB height: 30.
0mm  Lead pitch: 0.
6mm  Lead-free (RoHS compliant) • Power supply: VDD = 1.
8V ± 0.
1V • Data rate: 800Mbps/667Mbps (max.
) • Eight internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5, 6 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms  Average refresh period 7.
8µs at 0°C ≤ TC ≤ +85°C 3.
9µs at +85°C < TC ≤ +95°C • Operating case temperature range  TC = 0°C to +95°C Features • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs • Differential clock inputs (CK and /CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Data mask (DM) for write data • Posted CAS by programmable additive latency for better command and data bus efficiency • Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality • /DQS can be disabled for single-ended Data Strobe operation Document No.
E1216E10 (Ver.
1.
0) Date Published November 2007 (K) Japan Printed in Japan URL: http://www.
elpida.
com Elpida Memory, Inc.
2007 EBE11UE6ACUA Ordering Information Data rate Mbps (max.
) 800 Component JEDEC speed bin (CL-tRCD-tRP) DDR2-800 (5-5-5) DDR2-800 (6-6-6) 200-pin SO-DIMM Gold (lead...



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