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K4S643233F-SDI

Part Number	K4S643233F-SDI
Manufacturer	Samsung semiconductor
Description	2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
Published	Mar 25, 2010
Detailed Description	www.DataSheet4U.com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Re...
Datasheet	K4S643233F-SDI PDF File

Overview

www.
DataSheet4U.
com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.
0V/3.
0V or 3.
3V/3.
3V) Revision 1.
5 December 2002 Rev.
1.
5 Dec.
2002 www.
DataSheet4U.
com K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.
0V & 3.
3 power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock .
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle).
Extended temperature operation (-25°C to 85 °C).
Industrial temperature operation ( -40° C to 85° C).
90balls FBGA(-SXXX -Pb, -DXXX -Pb Free).
CMOS SDRAM GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock.
I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
• • • • • • • ORDERING INFORMATION Part No.
K4S643233F-SE/N/I/P75 K4S643233FSE/N/I/P1H K4S643233F-SE/N/I/P1L K4S643233F-DE/N/I/P75 K4S643233F-DE/N/I/P1H K4S643233F-DE/N/I/P1L Max Freq.
133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=2) 105MHz(CL=3)*1 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=2) 105MHz(CL=3)*1 LVCMOS 90FBGA Pb Free Interface Package 90FBGA Pb FUNCTIONAL BLOCK DIAGRAM -S(D)E/N ; Normal/Low Power, Temp : -25 °C ~ 85 °C.
-S(D)I/P ; Normal/Low Power, Temp : -40° C ~ 85 °C.
Note : 1.
In case of 40MHz Frequency, CL1 can be supported.
I/O Control LWE Data Input Register LDQM Bank Select 512K x 32 512K x 32 512K x 32 512K x 32 Refresh...

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