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IXFR44N50Q

IXYS Corporation
Part Number IXFR44N50Q
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs ISOPLUS247 Q-Class
Published Mar 25, 2010
Detailed Description www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class (Electrically Isolated Backside) N-Channel Enhanceme...
Datasheet PDF File IXFR44N50Q PDF File

IXFR44N50Q
IXFR44N50Q

Overview
www.
DataSheet4U.
com HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS(on) 500 V 34 A 120 mΩ 500 V 40 A 110 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 44N50Q 48N50Q 44N50Q 48N50Q 44N50Q 48N50Q 34 40 176 192 44 48 60 2.
5 5 310 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source D = Drain * Patent pending Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l l l 1.
6 mm (0.
063 in.
) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 IXYS advanced low Qg process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) l Fast intrinsic diode Applications l DC-DC converters l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
500 2.
0 V 4.
0 V ±100 nA TJ = 125°C 44N50Q 48N50Q 100 µA 2 mA 120 mΩ 110 mΩ Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250µA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 Advantages l Easy assembly l l Space savings High power density © 2002 IXYS All rights reserved 98702B (6/02) IXFR 44N50Q IXFR 48N50Q www.
DataSheet4U.
com Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
Notes 2, 3 30 45 6400 VGS = 0 V, VDS =...


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