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SUM110P04-05

Part Number	SUM110P04-05
Manufacturer	Vishay Siliconix
Description	P-Channel 40-V (D-S) MOSFET
Published	Mar 25, 2010
Detailed Description	SUM110P04-05 www.DataSheet4U.com Vishay Siliconix P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 40 rDS(on) (Ω...
Datasheet	SUM110P04-05 PDF File

Overview

SUM110P04-05 www.
DataSheet4U.
com Vishay Siliconix P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 40 rDS(on) (Ω) 0.
005 at VGS = - 10 V ID (A)a - 110 Qg (Typ.
) 185 nC FEATURES • TrenchFET® Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S D Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free) P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit - 40 ± 20 - 110a - 110a 39b, c 33b, c 240 110 10b, c 75 281 375 262 15b, c 10.
5b, c - 55 to 175 260 °C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) Notes: a.
Package limited.
b.
Surface Mounted on 1" x 1" FR4 board.
c.
t = 10 s.
d.
Maximum under Steady State conditions is 40 °C/W.
Document Number: 73493 S-80274-Rev.
B, 11-Feb-08 www.
vishay.
com 1 t ≤ 10 s Steady State Symbol RthJA RthJC Typical 8 0.
33 Maximum 10 0.
4 Unit °C/W SUM110P04-05 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode ...

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