DatasheetsPDF.com

APT1101R2BFLL

Advanced Power Technology
Part Number APT1101R2BFLL
Manufacturer Advanced Power Technology
Description POWER MOS 7 FREDFET
Published Mar 27, 2010
Detailed Description APT1101R2BFLL APT1101R2SFLL www.DataSheet4U.com 1100V 10A 1.200Ω D3PAK TO-247 POWER MOS 7 ® R FREDFET Power MOS 7 i...
Datasheet PDF File APT1101R2BFLL PDF File

APT1101R2BFLL
APT1101R2BFLL

Overview
APT1101R2BFLL APT1101R2SFLL www.
DataSheet4U.
com 1100V 10A 1.
200Ω D3PAK TO-247 POWER MOS 7 ® R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg.
Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT1101R2BFLL_SFLL UNIT Volts Amps 1100 10 40 ±30 ±40 298 2.
38 -55 to 150 300 10 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1100 1.
20 250 1000 ±100 3 5 (VGS = 10V, 5A) Ohms µA nA Volts 2-2004 050-7185 Rev A Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)