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APT11GF120BRDQ1G

Advanced Power Technology
Part Number APT11GF120BRDQ1G
Manufacturer Advanced Power Technology
Description FAST IGBT and FRED
Published Mar 27, 2010
Detailed Description TYPICAL PERFORMANCE CURVES ® APT11GF120BRDQ1 www.DataSheet4U.com APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free T...
Datasheet PDF File APT11GF120BRDQ1G PDF File

APT11GF120BRDQ1G
APT11GF120BRDQ1G

Overview
TYPICAL PERFORMANCE CURVES ® APT11GF120BRDQ1 www.
DataSheet4U.
com APT11GF120BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish.
APT11GF120BRDQ1(G) 1200V FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs.
Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop • RBSOA and SCSOA Rated • High Freq.
Switching to 20KHz • Ultra Low Leakage Current G TO -2 47 C E • Ultrafast Soft Recovery Anti-parallel Diode C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT11GF120BRDQ1(G) UNIT Volts 1200 ±30 25 14 24 24A @ 1200V 156 -55 to 150 300 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max.
Lead Temp.
for Soldering: 0.
063" from Case for 10 Sec.
Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 350µA, Tj = 25°C) MIN TYP MAX Units 1200 4.
5 5.
5 2.
5 3.
1 2 2 6.
5 3.
0 500 3000 ±100 Collector-Emitter On Voltage (VGE = 15V, I C = 8A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 8A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES µA nA 12-2005 052-6212 Rev A Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGE...


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