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TC59LM906AMG-37

Part Number	TC59LM906AMG-37
Manufacturer	Toshiba Semiconductor
Description	MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
Published	Mar 28, 2010
Detailed Description	TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC www.DataSheet4U.com 512Mbits...
Datasheet	TC59LM906AMG-37 PDF File

Overview

TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC www.
DataSheet4U.
com 512Mbits Network FCRAM1 (SSTL_18 / HSTL_Interface) − 4,194,304-WORDS × 8 BANKS × 16-BITS − 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory.
TC59LM914/06AMG is Fast Cycle Random Access Memory (Network FCRAMTM) containing 536,870,912 memory cells.
TC59LM914AMG is organized as 4,194,304-words × 8 banks × 16 bits, TC59LM906AMG is organized as 8,388,608-words × 8 banks × 8 bits.
TC59LM914/06AMG feature a fully synchronous operation referenced to clock edge whereby all operations are synchronized at a clock input which en...

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