DatasheetsPDF.com

PBSS5540X

Part Number PBSS5540X
Manufacturer NXP Semiconductors
Title 40V 5A PNP low VCEsat (BISS) transistor
Description PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. MARKING 2 3 PINNING PIN emitter collector base RCEsa...
Features
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• High efficiency leading to less heat generation. APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Medium power driv...

File Size 128.57KB
Datasheet PBSS5540X PDF File







Similar Datasheet

PBSS5540X : PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency leading to less heat generation. • AEC-Q101 qualified 3. Applications • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Medium power driver (e.g. relays, buzzers and motors). 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat collector-emitter saturation resistance Conditi.

PBSS5540Z : DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z. MARKING TYPE NUMBER PBSS5540Z MARKING CODE PB5540 handbook, halfpage 4 2, 4 1 1 Top view 2 3 MAM288 3 Fig.1 Simplified outline (SOT223) and symbol. 2001 Sep 21 2 NXP Semiconductors 40 V low VCEsat PNP transistor Product data sheet PBSS5540Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IBM Ptot collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tstg Tj Tamb storage temperature junction temperature .

PBSS5540Z : SMD Type PNP Transistors PBSS5540Z (KBSS5540Z) Transistors ■ Features ● Low collector-emitter saturation voltage ● High current capability ● Improved device reliability due to reduced heat generation. 2, 4 1 3 SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 123 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Peak Collector Current Peak Base Current Collector Power Dissipation (Note.1) (Note.2) thermal resistance from junction to ambient (Note.3) Junction T.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)