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IXTK120N25P

IXYS Corporation
Part Number IXTK120N25P
Manufacturer IXYS Corporation
Description PolarHT Power MOSFET
Published Mar 30, 2010
Detailed Description PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTK120N25P Symbol VDSS VDGR VGSS...
Datasheet PDF File IXTK120N25P PDF File

IXTK120N25P
IXTK120N25P

Overview
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTK120N25P Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s Mounting Torque TO-264 Maximum Ratings 250 V 250 V ± 20 V ± 30 V 120 A 75 A 300 A 60 A 2.
5 J 10 700 -55 .
.
.
+150 150 -55 .
.
.
+150 300 260 V/ns W °C °C °C °C °C 1.
13/10 10 Nm/lb.
in.
g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 500μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0 V TJ = 125°C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
250 V 2.
5 5.
0 V ± 200 nA 25 μA 250 μA 19 ...


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