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APT30GN60B

Microsemi Corporation
Part Number APT30GN60B
Manufacturer Microsemi Corporation
Description Resonant Mode Combi IGBT
Published Mar 31, 2010
Detailed Description TYPICAL PERFORMANCE CURVES APT30GN60B APT30GN60B_S(G) APT30GN60S APT30GN60B(G) APT30GN60S(G) www.DataSheet4U.com 600V *...
Datasheet PDF File APT30GN60B PDF File

APT30GN60B
APT30GN60B

Overview
TYPICAL PERFORMANCE CURVES APT30GN60B APT30GN60B_S(G) APT30GN60S APT30GN60B(G) APT30GN60S(G) www.
DataSheet4U.
com 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss.
Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient.
Low gate charge simplifies gate drive design and minimizes losses.
G C (B) TO -2 47 D3PAK (S) C G E • 600V Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated E C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pul...


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