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APTGF350DU60G

Microsemi Corporation
Part Number APTGF350DU60G
Manufacturer Microsemi Corporation
Description Dual common source NPT IGBT Power Module
Published Mar 31, 2010
Detailed Description APTGF350DU60G Dual common source NPT IGBT Power Module VCES = 600V IC = 350A @ Tc = 80°C Application • AC Switches • Swi...
Datasheet PDF File APTGF350DU60G PDF File

APTGF350DU60G
APTGF350DU60G

Overview
APTGF350DU60G Dual common source NPT IGBT Power Module VCES = 600V IC = 350A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Q2 G2 www.
DataSheet4U.
com C1 Q1 G1 C2 E1 E2 E Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings 600 430 350 1225 ±20 1562 800A @ 600V Unit V A V W G1 E1 C1 E C2 E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
See application note APT0502 on www.
microsemi.
com www.
microsemi.
com 1-6 APTGF350DU60G – Rev 2 July, 2006 APTGF350DU60G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time T...


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