DatasheetsPDF.com

APTGF50DH120TG

Microsemi Corporation
Part Number APTGF50DH120TG
Manufacturer Microsemi Corporation
Description Asymmetrical - Bridge NPT IGBT Power Module
Published Apr 1, 2010
Detailed Description APTGF50DH120TG Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.com VCES = 1200V ...
Datasheet PDF File APTGF50DH120TG PDF File

APTGF50DH120TG
APTGF50DH120TG

Overview
APTGF50DH120TG Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 www.
DataSheet4U.
com VCES = 1200V IC = 50A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Max ratings 1200 75 50 150 ±20 312 100A @ 1200V Unit V July, 2006 1-6 APTGF50DH120TG – Rev 2 E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS SENSE NT C1 0/VBUS NT C2 VBUS SENSE G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C A V W Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
See application note APT0502 on www.
microsemi.
com www.
microsemi.
com APTGF50DH120TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)