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APTGF50TL60T3G

Part Number	APTGF50TL60T3G
Manufacturer	Microsemi Corporation
Description	Three level inverter NPT IGBT Power Module
Published	Apr 1, 2010
Detailed Description	APTGF50TL60T3G www.DataSheet4U.com Three level inverter NPT IGBT Power Module VCES = 600V IC = 50A @ Tc = 80°C Applicat...
Datasheet	APTGF50TL60T3G PDF File

Overview

APTGF50TL60T3G www.
DataSheet4U.
com Three level inverter NPT IGBT Power Module VCES = 600V IC = 50A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … Q1 to Q4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 600 65 50 230 ±20 250 100A @ 500V Unit V March, 2009 1-8 APTGF50TL60T3G – Rev 0 A V W These Devices are sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.
microsemi.
com www.
microsemi.
com APTGF50TL60T3G www.
DataSheet4U.
com All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C T j = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.
45 6 400 Unit µA V V nA 1.
7 4 2.
0 2.
2 Q1 to Q4 Dynamic Chara...

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APTGF50TL60T3G Three level inverter NPT IGBT Power Module - Microsemi Corporation

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