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APTGF50X60T3G

Microsemi Corporation
Part Number APTGF50X60T3G
Manufacturer Microsemi Corporation
Description 3 Phase bridge NPT IGBT Power Module
Published Apr 1, 2010
Detailed Description www.DataSheet4U.com APTGF50X60T3G 3 Phase bridge NPT IGBT Power Module 15 16 19 20 18 23 25 29 30 22 28 R1 31 14 VCES ...
Datasheet PDF File APTGF50X60T3G PDF File

APTGF50X60T3G
APTGF50X60T3G

Overview
www.
DataSheet4U.
com APTGF50X60T3G 3 Phase bridge NPT IGBT Power Module 15 16 19 20 18 23 25 29 30 22 28 R1 31 14 VCES = 600V IC = 50A* @ Tc = 80°C Application • Motor control Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant 11 10 12 8 7 4 3 2 13 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 600 65 50 * 230 ±20 250 100A @ 500V Unit V A V W July, 2007 1-6 APTGF50X60T3G – Rev 0 * Specification of IGBT device but output current must be limited to 40A at Tc=80°C not to exceed a connectors temperature greater than 120°C.
These Devices are sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.
microsemi.
com www.
microsemi.
com www.
DataSheet4U.
com APTGF50X60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) ...


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