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APTGF75DH120T3G

Microsemi Corporation
Part Number APTGF75DH120T3G
Manufacturer Microsemi Corporation
Description Asymmetrical - Bridge NPT IGBT Power Module
Published Apr 1, 2010
Detailed Description APTGF75DH120T3G Asymmetrical - Bridge NPT IGBT Power Module 13 14 www.DataSheet4U.com VCES = 1200V IC = 75A @ Tc = 80°...
Datasheet PDF File APTGF75DH120T3G PDF File

APTGF75DH120T3G
APTGF75DH120T3G


Overview
APTGF75DH120T3G Asymmetrical - Bridge NPT IGBT Power Module 13 14 www.
DataSheet4U.
com VCES = 1200V IC = 75A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Q1 CR1 18 CR3 22 19 23 7 8 Q4 CR2 CR4 4 3 29 15 30 31 32 16 R1 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS compliant 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 100 75 150 ±20 500 150A @ 1200V Unit V A V W April, 2009 1-5 APTGF75DH120T3G – Rev 0 These Devices are sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.
microsemi.
com www.
microsemi.
com APTGF75DH120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 12...


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