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IXFV26N60P

Part Number	IXFV26N60P
Manufacturer	IXYS Corporation
Description	N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
Published	Apr 2, 2010
Detailed Description	Advance AdvanceTechnical TechnicalInformation Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancem...
Datasheet	IXFV26N60P PDF File

Overview

Advance AdvanceTechnical TechnicalInformation Information www.
DataSheet4U.
com PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr TO-247 (IXFH) 600 V 26 A 270 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 26 65 26 40 1.
2 10 V V V V A A A mJ J V/ns G...

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