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K4S56323LF-FS

Part Number	K4S56323LF-FS
Manufacturer	Samsung semiconductor
Description	2M x 32Bit x 4 Banks Mobile SDRAM
Published	Apr 4, 2010
Detailed Description	K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compat...
Datasheet	K4S56323LF-FS PDF File

Overview

K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.
5V/2.
5V • LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (4K cycle).
Commercial Temperature Op...

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