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K4S56323LF-FHL

Samsung semiconductor
Part Number K4S56323LF-FHL
Manufacturer Samsung semiconductor
Description 2M x 32Bit x 4 Banks Mobile SDRAM
Published Apr 4, 2010
Detailed Description K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compat...
Datasheet PDF File K4S56323LF-FHL PDF File

K4S56323LF-FHL
K4S56323LF-FHL

Overview
K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.
5V/2.
5V • LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (4K cycle).
Commercial Temperature Operation (-25°C ~ 70°C).
Extended Temperature Operation (-25°C ~ 85°C).
90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).
Mobile-SDRAM www.
DataSheet4U.
com GENERAL DESCRIPTION The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated w...


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