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GS8160V32AT

GSI Technology
Part Number GS8160V32AT
Manufacturer GSI Technology
Description 1M x 18 512K x 32 512K x 36 18Mb Sync Burst SRAMs
Published Apr 4, 2010
Detailed Description Preliminary www.DataSheet4U.com GS8160V18/32/36AT-350/333/300/250/200/150 100-Pin TQFP Commercial Temp Industrial Temp ...
Datasheet PDF File GS8160V32AT PDF File

GS8160V32AT
GS8160V32AT

Overview
Preliminary www.
DataSheet4U.
com GS8160V18/32/36AT-350/333/300/250/200/150 100-Pin TQFP Commercial Temp Industrial Temp Features 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 350 MHz–150 MHz 1.
8 V VDD 1.
8 V I/O • FT pin for user-configurable flow through or pipeline operation • Single Cycle Deselect (SCD) operation • 1.
8 V +10%/–10% core power supply • 1.
8 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to Interleaved Pipeline mode • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 100-lead TQFP package cycles can be initiated with either ADSP or ADSC inputs.
In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV.
The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input.
The Burst ...


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