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HYB39S16400AT-8

Siemens Semiconductor
Part Number HYB39S16400AT-8
Manufacturer Siemens Semiconductor
Description 16 MBit Synchronous DRAM
Published Apr 10, 2010
Detailed Description www.DataSheet4U.com 16 MBit Synchronous DRAM (second generation) Advanced Information • High Performance: CAS latency =...
Datasheet PDF File HYB39S16400AT-8 PDF File

HYB39S16400AT-8
HYB39S16400AT-8

Overview
www.
DataSheet4U.
com 16 MBit Synchronous DRAM (second generation) Advanced Information • High Performance: CAS latency = 3 -8 125 8 7 -10 100 10 8 Units MHz ns ns HYB 39S16400/800/160AT-8/-10 • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command • Data Mask for Read/Write control (× 4, × 8) • Dual Data Mask for byte control (× 16) • Auto Refresh (CBR) and Self Refresh • Suspend Mode and Power Down Mode • 4096 refresh cycles/64 ms • Random Column Address every CLK (1-N Rule) • Single 3.
3 V ± 0.
3 V Power Supply • LVTTL Interface versions • Plastic Packages: P-TSOPII-44-1 400 mil width (× 4, × 8) P-TSOPII-50-1 400 mil width (× 16) fCK tCK3 tAC3 • Single Pulsed RAS Interface • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature • Dual Banks controlled by A11 (Bank Select) • Programmable CAS Latency: 1, 2, 3 • Programmable Wrap Sequence: Sequential or Interleave • Programmable Burst Length: 1, 2, 4, 8 and full page for Seq...


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