DatasheetsPDF.com

APTGT75DA170D1

Part Number	APTGT75DA170D1
Manufacturer	Advanced Power Technology
Description	Power-Module IGBT
Published	Apr 11, 2010
Detailed Description	APTGT75DA170D1 Trench IGBT Power Module www.DataSheet4U.com Boost chopper ® VCES = 1700V IC = 75A @ Tc = 80°C Applica...
Datasheet	APTGT75DA170D1 PDF File

Overview

APTGT75DA170D1 Trench IGBT Power Module www.
DataSheet4U.
com Boost chopper ® VCES = 1700V IC = 75A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat 3 Q2 6 7 1 2 3 4 5 7 6 2 1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25°C Tj = 125°C V W These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1-3 APTGT75DA170D1 – Rev 0 150A@1700V January, 2004 TC = 25°C TC = 80°C TC = 25°C Max ratings 1700 120 75 150 ±20 520 Unit V A APTGT75DA170D1 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 3mA VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 75A Tj = 125°C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 75A RG =...

Similar Datasheet

APTGT75DA170D1 Power-Module IGBT - Advanced Power Technology

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)