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APTGT75DH60TG

Microsemi Corporation
Part Number APTGT75DH60TG
Manufacturer Microsemi Corporation
Description Power-Module IGBT
Published Apr 11, 2010
Detailed Description APTGT75DH60TG Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module VBUS VBUS SENSE Q1 G1 CR3 www.DataSheet4U.co...
Datasheet PDF File APTGT75DH60TG PDF File

APTGT75DH60TG
APTGT75DH60TG

Overview
APTGT75DH60TG Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module VBUS VBUS SENSE Q1 G1 CR3 www.
DataSheet4U.
com VCES = 600V IC = 75A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Max ratings 600 100 75 140 ±20 250 150A @ 550V Unit V A V W E1 OUT1 O UT2 Q4 G4 CR2 E4 0/VBUS SENSE NTC1 0/VBUS NT C2 VBUS SENSE G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
See application note APT0502 on www.
microsemi.
com www.
microsemi.
com 1-5 APTGT75DH60TG – Rev 1, June 2006 Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area APTGT75DH60TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15...


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