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APTGT75X120TE3

Advanced Power Technology
Part Number APTGT75X120TE3
Manufacturer Advanced Power Technology
Description Power-Module IGBT
Published Apr 11, 2010
Detailed Description APTGT75X120TE3 3 Phase bridge Trench IGBT® Power Module Application • AC Motor control www.DataSheet4U.com VCES = 1200...
Datasheet PDF File APTGT75X120TE3 PDF File

APTGT75X120TE3
APTGT75X120TE3


Overview
APTGT75X120TE3 3 Phase bridge Trench IGBT® Power Module Application • AC Motor control www.
DataSheet4U.
com VCES = 1200V IC = 75A @ Tc = 80°C Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring • • • • 19 18 17 16 15 Benefits • • • • • • • Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 20 14 21 13 1 2 3 4 5 6 7 8 9 10 11 12 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Operating Area TC = 25°C Tj = 125°C V W These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1-3 APTGT75X120TE3 – Rev 0 150A@1100V July, 2003 TC = 25°C TC = 80°C TC = 25°C Max ratings 1200 100 75 175 ±20 350 Unit V A APTGT75X120TE3 Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current www.
DataSheet4U.
com All ratings @ Tj = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 5mA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min Typ Max 5 2.
1 6.
5 500 1200 Unit V mA V V nA 1.
4 5.
0 1.
7 2.
0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) T...



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