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APTGT50DA170T

Advanced Power Technology
Part Number APTGT50DA170T
Manufacturer Advanced Power Technology
Description Power-Module IGBT
Published Apr 11, 2010
Detailed Description APTGT50DA170T Boost chopper Trench + Field Stop IGBT® Power Module VB US SENS E VBUS NT C2 www.DataSheet4U.com VCES = ...
Datasheet PDF File APTGT50DA170T PDF File

APTGT50DA170T
APTGT50DA170T

Overview
APTGT50DA170T Boost chopper Trench + Field Stop IGBT® Power Module VB US SENS E VBUS NT C2 www.
DataSheet4U.
com VCES = 1700V IC = 50A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile CR1 OUT Q2 G2 E2 0/VBU S NT C1 G2 E2 OUT VBUS 0/VBUS OUT VBUS SENSE E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1700 75 50 100 ±20 312 100A @ 1600V Unit V A V W May, 2005 1-5 APTGT50DA170T – Rev 0 Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com APTGT50DA170T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 2.
0 2.
4 5.
8 Max 250 2.
4 6.
5 400 Unit µA ...


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