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APTGT50DU170TG

Microsemi Corporation
Part Number APTGT50DU170TG
Manufacturer Microsemi Corporation
Description Power-Module IGBT
Published Apr 11, 2010
Detailed Description APTGT50DU170TG Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 www.DataSheet4U.com VCES = 1700V ...
Datasheet PDF File APTGT50DU170TG PDF File

APTGT50DU170TG
APTGT50DU170TG

Overview
APTGT50DU170TG Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 www.
DataSheet4U.
com VCES = 1700V IC = 50A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Max ratings 1700 75 50 100 ±20 312 100A @ 1600V Unit V A V W July, 2006 1-5 APTGT50DU170TG – Rev 1 Q2 G2 E1 E2 NTC1 E NTC2 G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
See application note APT0502 on www.
microsemi.
com www.
microsemi.
com APTGT50DU170TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 2.
0 2.
4 5.
8 Max 250 2.
4 6.
5 ...


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