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IXTH50P10

IXYS Corporation
Part Number IXTH50P10
Manufacturer IXYS Corporation
Description Standard Power MOSFET
Published Apr 11, 2010
Detailed Description Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH50P10 IXTT50P10 VDSS = ID25 = ≤ RDS(on) - 100V -...
Datasheet PDF File IXTH50P10 PDF File

IXTH50P10
IXTH50P10

Overview
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH50P10 IXTT50P10 VDSS = ID25 = ≤ RDS(on) - 100V - 50A 55mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings -100 V -100 V ±20 V ±30 V - 50 A - 200 A - 50 A 30 mJ 300 W - 55 .
.
.
+150 °C 150 °C - 55 .
.
.
+150 °C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in.
6 g 5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = - 250 μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 0.
8 • VDSS VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
-100 V - 3.
0 - 5.
0 V ±100 n...


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