DatasheetsPDF.com

EMIF02-USB01

STMicroelectronics
Part Number EMIF02-USB01
Manufacturer STMicroelectronics
Description EMI filter including ESD protection
Published Apr 12, 2010
Detailed Description EMIF02-USB01F2 2-line IPAD™, EMI filter including ESD protection Features ■ 2-line low-pass filter + ESD protection ■ H...
Datasheet PDF File EMIF02-USB01 PDF File

EMIF02-USB01
EMIF02-USB01

Overview
EMIF02-USB01F2 2-line IPAD™, EMI filter including ESD protection Features ■ 2-line low-pass filter + ESD protection ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space occupation: < 2.
5 mm2 ■ Very thin package: 0.
65 mm ■ High efficiency in ESD suppression (IEC 61000-4-2 level 4) ■ High reliability offered by monolithic integration ■ High reduction of parasitic elements through integration and wafer level packaging Complies with the following standards ■ IEC 61000-4-2 level 4 – ±15 kV (air discharge) – ±8 kV (contact discharge) Application ■ ESD protection and EMI filtering for USB port Description The EMIF02-USB01F2 is a highly integrated array designed to suppress EMI / RFI noise for USB port filtering.
The EMIF02-USB01F2 Flip-Chip packaging means the package size is equal to the die size.
Additionally, this filter includes ESD protection circuitry which prevents damage to the protected device when subjected to ESD surges up to 15 kV.
Flip Chip (8 bumps) Figure 1.
Pin configuration (bump side view) 32 1 Pup Vbus A DZ B D+ in D+ out C GND D Din Dout E Figure 2.
Schematic Vbus DZ D+ out 1.
3K R3 33 R1 Pup D+ in GND D- out 33 D- in R2 September 2009 TM: IPAD is a trademark of STMicroelectronics.
Doc ID 10950 Rev 4 1/8 www.
st.
com 8 Characteristics 1 Characteristics EMIF02-USB01F2 Table 1.
Symbol Absolute ratings (Tamb = 25 °C) Parameter Tj Junction temperature Top Operating temperature range Tstg Storage temperature range Figure 3.
Electrical characteristics - definitions Value 125 -40 to +85 -55 to 150 Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage IRM Leakage current @ VRM IPP Peak pulse current C line Input capacitance per line I IPP VBR VRM IR IRM V IRM VRM VBR IR IPP Unit °C °C °C Table 2.
Electrical characteristics - values (Tamb = 25 °C) Symbol Test conditions Min.
Typ.
Max.
Unit VBR IRM Cline R1, R2 R3 IR = 1 mA VRM = 3 V @0V Tolerance ± 5 % Tolerance ± 5 %...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)